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ar c hive inf o rmati o n archive information replaced by mrf6s18060nr1/nbr1. there are no form, fit or function changes with this part replacement. n suffix added to part number to indicate transition to lead - free terminations. MRF6S18060MR1 mrf6s18060mbr1 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for gsm and gsm edge base station applications with frequencies from 1800 to 2000 mhz. suitable for tdma, cdma, and multicarrier amplifier applications. gsm application ? typical gsm performance: v dd = 26 vdc, i dq = 600 ma, p out = 60 watts cw, full frequency band (1805 - 1880 mhz or 1930 - 1990 mhz) power gain ? 15 db drain efficiency - 50% gsm edge application ? typical gsm edge performance: v dd = 26 volts, i dq = 450 ma, p out = 25 watts avg., full frequency band (1805 - 1880 mhz or 1930 - 1990 mhz) power gain ? 15.5 db spectral regrowth @ 400 khz offset = - 62 dbc spectral regrowth @ 600 khz offset = - 76 dbc evm ? 2% rms ? capable of handling 5:1 vswr, @ 26 vdc, 1990 mhz, 60 watts cw output power ? characterized with series equivalent large - signal impedance parameters ? internally matched for ease of use ? qualified up to a maximum of 32 v dd operation ? integrated esd protection ? 200 c capable plastic package ? in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +68 vdc gate - source voltage v gs - 0.5, +12 vdc total device dissipation @ t c = 25 c derate above 25 c p d 216 1.2 w w/ c storage temperature range t stg - 65 to +175 c operating junction temperature t j 200 c table 2. thermal characteristics characteristic symbol value (1) unit thermal resistance, junction to case case temperature 80 c, 60 w cw case temperature 77 c, 25 w cw r jc 0.81 0.95 c/w 1. mttf calculator available at http://www.freescale.com/rf . select tools/software/application software/calculators to access the mttf calculators by product. note - caution - mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. document number: mrf6s18060 rev. 2, 5/2006 freescale semiconductor technical data MRF6S18060MR1 mrf6s18060mbr1 1800 - 2000 mhz, 60 w, 26 v gsm/gsm edge lateral n - channel rf power mosfets case 1486 - 03, style 1 to - 270 wb - 4 plastic MRF6S18060MR1 case 1484 - 04, style 1 to - 272 wb - 4 plastic mrf6s18060mbr1 ? freescale semiconductor, inc., 2006. all rights reserved.
ar c hive inf o rmati o n archive information 2 rf device data freescale semiconductor MRF6S18060MR1 mrf6s18060mbr1 table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 1b (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iii (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22 - a113, ipc/jedec j - std - 020 3 260 c table 5. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 68 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 200 adc) v gs(th) 1 2 3 vdc gate quiescent voltage (v ds = 26 vdc, i d = 600 madc) v gs(q) 2 2.8 4 vdc drain - source on - voltage (v gs = 10 vdc, i d = 2 adc) v ds(on) ? 0.24 ? vdc forward transconductance (v ds = 10 vdc, i d = 2 adc) g fs ? 5.3 ? s dynamic characteristics reverse transfer capacitance (1) (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 1.5 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd = 26 vdc, i dq = 600 ma, p out = 60 w, f = 1930 mhz, f = 1990 mhz power gain g ps 14 15 17 db drain efficiency d 48 50 ? % input return loss irl ? -12 -9 db p out @ 1 db compression point p1db 60 65 ? w 1. part is internally matched both on input and output. (continued)
ar c hive inf o rmati o n archive information MRF6S18060MR1 mrf6s18060mbr1 3 rf device data freescale semiconductor table 5. electrical characteristics (t c = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical gsm edge performances (in freescale broadband test fixture, 50 hm system) v dd = 26 vdc, i dq = 450 ma, p out = 25 w avg., 1805 mhz ar c hive inf o rmati o n archive information 4 rf device data freescale semiconductor MRF6S18060MR1 mrf6s18060mbr1 z1 0.250 x 0.083 microstrip z2* 0.950 x 0.083 microstrip z3* 0.250 x 0.083 microstrip z4* 0.315 x 0.083 microstrip z5 0.365 x 1.000 microstrip z6 0.680 x 0.080 microstrip z7, z8 0.115 x 1.000 microstrip z9 0.485 x 1.000 microstrip z10* 0.500 x 0.083 microstrip z11* 0.895 x 0.083 microstrip z12 0.250 x 0.083 microstrip z13 0.200 x 0.080 microstrip pcb taconic tlx8 - 0300, 0.030 , r = 2.55 * variable for tuning figure 1. MRF6S18060MR1(mbr1) test circuit schematic ? 1900 mhz v bias rf input rf output z1 c3 c4 z3 dut z9 z10 z11 c1 r3 c11 c9 + z2 r1 c10 v supply r2 c5 c6 z8 c2 z4 z5 z7 z6 z12 z13 c7 c8 table 6. MRF6S18060MR1(mbr1) test circuit component designations and values ? 1900 mhz part description part number manufacturer c1, c2, c3, c4 6.8 pf 100b chip capacitors 100b6r8cw atc c5 1.5 pf 100b chip capacitor 100b1r5bw atc c6 1.8 pf 100b chip capacitor 100b1r8bw atc c7, c8 1 pf 100b chip capacitors 100b1r0bw atc c9, c10 10 f chip capacitors (2220) c5750x5r1h106mt tdk c11 220 f, 63 v electrolytic capacitor, radial 13668221 philips r1, r2 10 k , 1/4 w chip resistors (1206) r3 10 , 1/4 w chip resistor (1206)
ar c hive inf o rmati o n archive information MRF6S18060MR1 mrf6s18060mbr1 5 rf device data freescale semiconductor figure 2. MRF6S18060MR1(mbr1) test circuit component layout ? 1900 mhz mrf6s18060n/nb v gs v ds r1 r2 c1 r3 c5 c3 c6 c9 c10 c8 c4 c7 cut out area c11 c2 rev. 0
ar c hive inf o rmati o n archive information 6 rf device data freescale semiconductor MRF6S18060MR1 mrf6s18060mbr1 typical characteristics ? 1900 mhz g ps , power gain (db) irl, input return loss (db) f, frequency (mhz) 13 1900 47 g ps v dd = 26 vdc i dq = 600 ma 18 57 55 53 51 49 2020 irl figure 3. power gain, input return loss and drain efficiency versus frequency @ p out = 60 watts ?20 0 ?5 ?10 ?15 ?25 d , drain efficiency (%) 17 16 15 14 d 1920 1940 1960 1980 2000 g ps , power gain (db) irl, input return loss (db) f, frequency (mhz) 13 1900 32 g ps v dd = 26 vdc i dq = 600 ma 18 42 40 38 36 2020 irl figure 4. power gain, input return loss and drain efficiency versus frequency @ p out = 30 watts ?20 0 ?5 ?10 ?15 ?25 d , drain efficiency (%) 17 16 15 14 d 1920 1940 1960 1980 2000 figure 5. power gain versus output power p out , output power (watts) v dd = 26 vdc f = 1960 mhz 750 ma i dq = 900 ma 10 12 1 17 15 14 13 100 g ps , power gain (db) 16 600 ma 450 ma 300 ma 40 12 0 17 16 15 14 13 20 100 60 80 figure 6. power gain versus output power p out , output power (watts) cw v dd = 32 v 26 v i dq = 600 ma f = 1960 mhz g ps , power gain (db) 24 v 20 v 16 v 12 v 34
ar c hive inf o rmati o n archive information MRF6S18060MR1 mrf6s18060mbr1 7 rf device data freescale semiconductor typical characteristics ? 1900 mhz figure 7. power gain and drain efficiency versus cw output power figure 8. error vector magnitude versus frequency 100 10 17 1 0 70 v dd = 26 vdc i dq = 600 ma f = 1960 mhz t c = ?30 c ?30 c 25 c 85 c 10 16 15 14 13 12 11 60 50 40 30 20 10 p out , output power (watts) cw figure 9. error vector magnitude and drain efficiency versus output power ?55 ?60 ?65 ?70 ?75 1920 ?80 figure 10. spectral regrowth at 400 khz and 600 khz versus frequency f, frequency (mhz) p out = 35 w avg. 25 w avg. 10 w avg. v dd = 26 vdc i dq = 450 ma p out , output power (watts) avg. 100 4 12 v dd = 26 vdc i dq = 450 ma f = 1960 mhz 8 6 0 10 1 2 20 60 40 30 0 10 t c = ?30 c, 25 c 85 c g ps t c = ?30 c 25 c 85 c ?75 ?45 0 p out , output power (watts) avg. ?50 ?55 ?60 ?65 ?70 10 figure 11. spectral regrowth at 400 khz versus output power d , drain efficiency (%) d d , drain efficiency (%) d g ps , power gain (db) evm, error vector magnitude (% rms) 2020 1 4 1900 3 2.5 1.5 1980 1960 1940 1920 3.5 2 evm, error vector magnitude (% rms) spectral regrowth @ 400 khz (dbc) spectral regrowth @ 400 khz and 600 khz (dbc) 25 c 85 c 2000 10 50 evm ?30 c 25 c 85 c 1940 1960 1980 2000 v dd = 26 vdc i dq = 450 ma f = 1960 mhz p out = 35 w avg. 25 w avg. 10 w avg. 35 w avg. 25 w avg. 10 w avg. f, frequency (mhz) 20 30 40 50 60 v dd = 26 vdc i dq = 450 ma f = 1960 mhz t c = 85 c 25 c ?30 c ?85 ?55 0 p out , output power (watts) avg. ?60 ?70 ?75 ?80 10 figure 12. spectral regrowth at 600 khz versus output power spectral regrowth @ 600 khz (dbc) 20 30 40 50 60 v dd = 26 vdc i dq = 450 ma f = 1960 mhz ?65 sr 400 khz sr 600 khz
ar c hive inf o rmati o n archive information 8 rf device data freescale semiconductor MRF6S18060MR1 mrf6s18060mbr1 typical characteristics 210 1.e+09 90 t j , junction temperature ( c) this above graph displays calculated mttf in hours x ampere 2 drain current. life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. divide mttf factor by i d 2 for mttf in a particular application. 100 110 120 130 140 150 160 170 180 1.e+08 1.e+06 1.e+07 figure 13. mttf factor versus junction temperature mttf factor (hours x amps 2 ) 200 190
ar c hive inf o rmati o n archive information MRF6S18060MR1 mrf6s18060mbr1 9 rf device data freescale semiconductor z o = 10 f = 1930 mhz z load z source f = 1990 mhz f = 1930 mhz f = 1990 mhz figure 14. series equivalent source and load impedance ? 1900 mhz z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network f mhz z source z load v dd = 26 vdc, i dq = 600 ma, p out = 60 w cw 1930 8.00 - j6.48 2.83 - j5.13 7.57 - j6.82 2.63 - j4.84 1960 1990 7.06 - j7.06 2.44 - j4.54
ar c hive inf o rmati o n archive information 10 rf device data freescale semiconductor MRF6S18060MR1 mrf6s18060mbr1 z1 0.250 x 0.083 microstrip z2* 0.320 x 0.083 microstrip z3* 0.660 x 0.083 microstrip z4* 0.535 x 0.083 microstrip z5 0.365 x 1.000 microstrip z6 0.860 x 0.080 microstrip z7, z8 0.115 x 1.000 microstrip z9 0.485 x 1.000 microstrip z10* 0.420 x 0.083 microstrip z11* 0.230 x 0.083 microstrip z12* 0.745 x 0.083 microstrip z13 0.250 x 0.083 microstrip z14 0.640 x 0.080 microstrip pcb taconic tlx8 - 0300, 0.030 , r = 2.55 * variable for tuning figure 15. MRF6S18060MR1(mbr1) test circuit schematic ? 1800 mhz v bias rf input rf output z1 c3 c4 z3 dut z9 z10 z11 c1 r3 c12 c10 + z2 r1 c11 v supply r2 c5 c7 z8 c2 z4 z5 z7 z6 z13 z14 c8 c6 c9 z12 table 7. MRF6S18060MR1(mbr1) test circuit component designations and values ? 1800 mhz part description part number manufacturer c1, c2, c3, c4 6.8 pf 100b chip capacitors 100b6r8cw atc c5 0.8 pf 600b chip capacitor 600b0r8bw atc c6, c9 0.5 pf 600b chip capacitors 600b0r5bw atc c7 2.2 pf 200b chip capacitor 200b2r2bw atc c8 1.5 pf 600b chip capacitor 600b1r5bw atc c10, c11 10 f chip capacitors (2220) c5750x5r1h106mt tdk c12 220 f, 63 v electrolytic capacitor, radial 13668221 philips r1, r2 10 k , 1/4 w chip resistors (1206) r3 10 , 1/4 w chip resistor (1206)
ar c hive inf o rmati o n archive information MRF6S18060MR1 mrf6s18060mbr1 11 rf device data freescale semiconductor figure 16. MRF6S18060MR1(mbr1) test circuit component layout ? 1800 mhz cut out area r1 r2 c1 c6 r3 c3 c5 c7 c2 c12 c10 c11 c8 c9 c4 mrf6s18060n/nb rev. 0 v gs v ds
ar c hive inf o rmati o n archive information 12 rf device data freescale semiconductor MRF6S18060MR1 mrf6s18060mbr1 typical characteristics ? 1800 mhz g ps , power gain (db) irl, input return loss (db) f, frequency (mhz) 12 47 g ps v dd = 26 vdc i dq = 600 ma 17 57 55 53 51 49 1920 irl figure 17. power gain, input return loss and drain efficiency versus frequency @ p out = 60 watts ?16 0 ?4 ?8 ?12 ?20 d , drain efficiency (%) 16 15 14 13 d 1780 1800 1820 1840 1860 1880 1900 g ps , power gain (db) irl, input return loss (db) f, frequency (mhz) 12 1760 33 g ps v dd = 26 vdc i dq = 600 ma 17 43 41 39 37 35 1920 irl figure 18. power gain, input return loss and drain efficiency versus frequency @ p out = 30 watts ?16 0 ?4 ?8 ?12 ?20 d , drain efficiency (%) 16 15 14 13 d 1780 1800 1820 1840 1860 1880 1900 figure 19. error vector magnitude versus frequency f, frequency (mhz) p out = 35 w avg. 25 w avg. 15 w avg. v dd = 26 vdc i dq = 450 ma evm, error vector magnitude (% rms) 1920 0.5 4.5 1780 3 2.5 1.5 1860 1840 1820 1800 3.5 2 1880 4 1 1900 figure 20. error vector magnitude and drain efficiency versus output power p out , output power (watts) avg. 100 4 10 v dd = 26 vdc i dq = 450 ma f = 1860 mhz 8 6 0 10 1 2 20 50 40 30 0 10 t c = 25 c d d , drain efficiency (%) evm, error vector magnitude (% rms) evm
ar c hive inf o rmati o n archive information MRF6S18060MR1 mrf6s18060mbr1 13 rf device data freescale semiconductor typical characteristics ? 1800 mhz ?50 ?60 ?65 ?70 ?75 1780 ?80 figure 21. spectral regrowth at 400 khz and 600 khz versus frequency spectral regrowth @ 400 khz and 600 khz (dbc) 1800 1820 1840 1860 v dd = 26 vdc i dq = 450 ma p out = 35 w avg. 25 w avg. 15 w avg. 35 w avg. 25 w avg. 10 w avg. sr 400 khz sr 600 khz ?55 1880 1900 1920 t c = 25 c ?75 ?45 0 p out , output power (watts) avg. ?50 ?55 ?60 ?65 ?70 10 figure 22. spectral regrowth at 400 khz versus output power spectral regrowth @ 400 khz (dbc) 20 30 40 50 60 v dd = 26 vdc i dq = 450 ma f = 1860 mhz t c = 25 c ?85 ?60 0 p out , output power (watts) avg. ?70 ?75 ?80 10 figure 23. spectral regrowth at 600 khz versus output power spectral regrowth @ 600 khz (dbc) 20 30 40 50 60 v dd = 26 vdc i dq = 450 ma f = 1860 mhz ?65 f, frequency (mhz)
ar c hive inf o rmati o n archive information 14 rf device data freescale semiconductor MRF6S18060MR1 mrf6s18060mbr1 figure 24. series equivalent source and load impedance ? 1800 mhz f mhz z source z load 1805 1840 4.16 - j7.56 3.56 - j7.21 3.89 - j7.40 3.29 - j4.91 3.10 - j4.69 2.88 - j4.45 v dd = 26 vdc, i dq = 600 ma, p out = 65 w cw 1880 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network z o = 10 f = 1880 mhz z load z source f = 1805 mhz f = 1880 mhz f = 1805 mhz
MRF6S18060MR1 mrf6s18060mbr1 15 rf device data freescale semiconductor notes
16 rf device data freescale semiconductor MRF6S18060MR1 mrf6s18060mbr1 package dimensions case 1486 - 03 issue c to - 270 wb - 4 plastic MRF6S18060MR1 datum plane bottom view a1 2x d1 e3 e1 d3 e4 a2 pin 5 note 8 a b c h drain lead d a m aaa c 4x b1 2x d2 notes: 1. controlling dimension: inch. 2. interpret dimensions and tolerances per asme y14.5m?1994. 3. datum plane ?h? is located at the top of lead and is coincident with the lead where the lead exits the plastic body at the top of the parting line. 4. dimensions ? d" and ? e1" do not include mold protrusion. allowable protrusion is .006 per side. dimensions ? d" and ? e1" do include mold mismatch and are deter? mined at datum plane ?h?. 5. dimension ? b1" does not include dambar protrusion. allowable dambar protrusion shall be .005 total in excess of the ? b1" dimension at maximum material condition. 6. datums ?a? and ?b? to be determined at datum plane ?h?. 7. dimension a2 applies within zone ? j" only. 8. hatching represents the exposed area of the heat slug. c1 f zone j e2 2x a dim a min max min max millimeters .100 .104 2.54 2.64 inches a1 .039 .043 0.99 1.09 a2 .040 .042 1.02 1.07 d .712 .720 18.08 18.29 d1 .688 .692 17.48 17.58 d2 .011 .019 0.28 0.48 d3 .600 ? ? ? 15.24 ? ? ? e .551 .559 14 14.2 e1 .353 .357 8.97 9.07 e2 .132 .140 3.35 3.56 e3 .124 .132 3.15 3.35 e4 .270 ? ? ? 6.86 ? ? ? f b1 .164 .170 4.17 4.32 c1 .007 .011 0.18 0.28 e .025 bsc .106 bsc 0.64 bsc 2.69 bsc 1 style 1: pin 1. drain 2. drain 3. gate 4. gate 5. source aaa .004 0.10 gate lead 4x e 2x e seating plane 4 2 3 ??????? ??????? ??????? ??????? ??????? ??????? ??????? ??????? ??????? ??????? ??????? ??????? ??????? note 7 e5 e5 e5 .346 .350 8.79 8.89
MRF6S18060MR1 mrf6s18060mbr1 17 rf device data freescale semiconductor
18 rf device data freescale semiconductor MRF6S18060MR1 mrf6s18060mbr1
MRF6S18060MR1 mrf6s18060mbr1 19 rf device data freescale semiconductor
20 rf device data freescale semiconductor MRF6S18060MR1 mrf6s18060mbr1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 fax: 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf6s18060 rev. 2, 5/2006 rohs- compliant and/or pb - free versions of freescale products have the functionality and electrical characteristics of their non - rohs- compliant and/or non - pb - free counterparts. for further information, see http://www.freescale.com or contact your freescale sales representative. for information on freescale?s environmental products pr ogram, go to http: //www .freescale.com/epp.

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